منابع مشابه
Dislocation density reduction in GaN using porous SiN interlayers
The influence of a thin porous SiNX interlayer on the growth of GaN by metalorganic chemical vapor deposition (MOCVD) has been studied. The interlayer is deposited on a GaN template by introducing silane in the presence of ammonia into the MOCVD chamber, and a GaN overlayer is deposited on the interlayer. The SiNX interlayer produces inhomogeneous nucleation and lateral growth of the overlayer,...
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Conductive atomic force microscopy, scanning electron microscopy, and x-ray diffraction were used to determine the effects of Ga/N flux ratio on the conductivity of current leakage paths in GaN grown by molecular beam epitaxy. Our data reveal a band of fluxes near Ga /N 1 for which these pathways ceased to be observable. We conclude that changes in surface defects surrounding or impurities alon...
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In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1-xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed. INTRODUCTION From the late 60’s to the early 70’s Maruska a...
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Hall mobility of the two dimensional electron gas in GaN quantum wells are calculated in the temperature range 1K-14K incorporating deformation potential acoustic, piezoelectric, background and remote ionized impurity scatterings. The Boltzmann transport equation is solved by a numerical iterative technique using Fermi-Dirac statistics. The variations of longitudinal magnetoresistivity with mag...
متن کاملA Low Temperature, Low Stress SiGe Process
In this project, we developed a low temperature (≤450C) silicon-germanium (SiGe) process using the Thermcopoly1/2 furnaces at SNF. Low stress (≤100MPa) poly SiGe has been successfully demonstrated with a deposition temperature below 450C and desired Si to Ge content ratio. Our SiGe deposition process is CMOS compatible and can enable a number of applications for microelectromechanical systems (...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 1998
ISSN: 0021-4922
DOI: 10.1143/jjap.37.l1540